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October 2007
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant
D
S
G
SOT - 523F
Marking : AA
Absolute Maximum Ratings *
T a = 25°C unless otherwise noted
Symbol
V DSS
V DGR
Parameter
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M ?
Value
60
60
Units
V
V
V GSS
I D
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Continuous
Continuous @ 100°C
±20
±40
115
73
V
mA
Pulsed
800
T J
T STG
Junction Temperature
Storage Temperature Range
150
-55 to +150
° C
° C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P D
R θ JA
Parameter
Total Device Dissipation
Derating above T A = 25°C
Thermal Resistance, Junction to Ambient *
Value
200
1.6
625
Units
mW
mW/ ° C
° C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
? 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
1
www.fairchildsemi.com
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